DMN31D5UFZ document number: ds36843 rev. 2 - 2 1 of 6 www.diodes.com june 2014 ? diodes incorporated DMN31D5UFZ new product advanced information new product n-channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d max t a = +25c 30v 1.5 ? @ v gs = 4.5v 0.22a 2.0 ? @ v gs = 2.5v 3.0 ? @ v gs = 1.8v 4.5 ? @ v gs = 1.5v description this mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency po wer management applications. applications ? general purpose interfacing switch ? power management functions ? analog switch features and benefits ? low package profile, 0.42mm maximum package height ? 0.62mm x 0.62mm package footprint ? low on-resistance ? very low gate threshold voltage, 1.0v max ? esd protected gate ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) mechanical data ? case: x2-dfn0606-3 ? case material: molded plasti c, ?green? molding compound ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? nipdau ov er copper leadframe solderable per mil-std-202, method 208 ? weight: 0.001 grams (approximate) ordering information (note 4) part number case packaging DMN31D5UFZ-7b x2-dfn0606-3 10k/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com/p roducts/packages.html. marking information equivalent circuit top view package pin configuration esd protected e4 r6 = product type marking code top view bar denotes gate and source side bottom view
DMN31D5UFZ document number: ds36843 rev. 2 - 2 2 of 6 www.diodes.com june 2014 ? diodes incorporated DMN31D5UFZ new product advanced information new product maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss 30 v gate-source voltage v gss 12 v continuous drain current (note 5) steady state t a = +25c t a = +85c i d 220 150 ma pulsed drain current (note 6) i dm 500 ma thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5) steady state p d 393 mw thermal resistance, junction to ambient (note 5) steady state r ja 318 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss 30 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current @t c = +25c i dss ? ? 100 na v ds = 24v, v gs = 0v gate-source leakage i gss ? ? 10 a v gs = 10v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs(th) 0.4 ? 1.0 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds(on) ? ? 1.5 ? v gs = 4.5v, i d = 100ma ? ? 2.0 v gs = 2.5v, i d = 50ma ? ? 3.0 v gs = 1.8v, i d = 20ma ? ? 4.5 v gs = 1.5v, i d = 10ma ? 2.8 ? v gs = 1.2v, i d = 1ma diode forward voltage v sd ? 0.75 1.0 v v gs = 0v, i s = 10ma dynamic characteristics (note 8) input capacitance c iss ? 22.2 ? pf v ds = 15v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 2.9 ? pf reverse transfer capacitance c rss ? 2.2 ? pf total gate charge q g ? 0.35 ? nc v gs = 4.5v, v ds = 15v, i d = 200ma gate-source charge q gs ? 0.05 ? nc gate-drain charge q gd ? 0.02 ? nc turn-on delay time t d(on) ? 3.1 ? ns v dd = 10v, v gs = 4.5v, r g = 6 ? , i d = 200ma turn-on rise time t r ? 2.0 ? ns turn-off delay time t d(off) ? 20 ? ns turn-off fall time t f ? 6.9 ? ns notes: 5. device mounted on fr-4 pcb, with minimum recommended pad layout. 6. device mounted on minimum recommended pad layout test board, 10 s pulse duty cycle = 1%. 7. short duration pulse test used to minimize self-heating effect. 8. guaranteed by design. not subject to product testing.
DMN31D5UFZ document number: ds36843 rev. 2 - 2 3 of 6 www.diodes.com june 2014 ? diodes incorporated DMN31D5UFZ new product advanced information new product v , drain-source voltage (v) figure 1 typical output characteristics ds i, d r ai n c u r r e n t (a) d 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.5 1 1.5 2 2.5 3 v= 1.2v gs v= 1.5v gs v= 1.8v gs v=2.0v gs v= 10v gs v= 4.5v gs v= 4.0v gs v= 2.5v gs v= 3.0v gs v , gate-source voltage (v) gs figure 2 typical transfer characteristics i, d r ain c u r r en t (a) d 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.5 1 1.5 2 2.5 3 v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r ain-s o u r ce o n- r esistance ( ) ds(on) 0 0.5 1 1.5 2 2.5 3 0 0.2 0.4 0.6 0.8 v = 1.8v gs v = 4.5v gs v = 2.5v gs v = 1.5v gs v = 1.2v gs i , drain current (a) d figure 4 typical on-resistance vs. drain current and temperature r, drain-s o urce o n-resistance ( ) ds(on) 0 0.5 1 1.5 2 2.5 3 0 0.2 0.4 0.6 0.8 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs t , junction temperature ( c) figure 5 on-resistance variation with temperature j r , d r ai n -s o u r c e on-resistance (normalized) ds(on) 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 v= v i = 50ma gs d 2.5 t , junction temperature ( c) figure 6 on-resistance variation with temperature j r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) 0 0.4 0.8 1.2 1.6 2 -50-250 255075100125150 v=.5v i = 50ma gs d 2 v= v i = 100ma gs d 4.5
DMN31D5UFZ document number: ds36843 rev. 2 - 2 4 of 6 www.diodes.com june 2014 ? diodes incorporated DMN31D5UFZ new product advanced information new product t , junction temperature ( c) figure 7 gate threshold variation vs. ambient temperature j v, g a t e t h r es h o ld v o l t a g e (v) gs(th) 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 -50 -25 0 25 50 75 100 125 150 i= 1ma d i= 250a d v , source-drain voltage (v) sd figure 8 diode forward voltage vs. current i, s o u r c e c u r r en t (a) s 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.3 0.6 0.9 1.2 1.5 t= 85c a t = 125c a t = 150c a t = -55c a t= 25c a v , drain-source voltage (v) ds figure 9 typical junction capacitance c , j u n c t i o n c a p a c i t an c e (pf) t 1 10 100 0 5 10 15 20 25 30 f = 1mhz c iss c oss c rss q(nc) g , total gate charge figure 10 gate charge v g at e t h r es h o ld v o lta g e (v) gs 0 2 4 6 8 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 v = 15v i= a ds d 200m t1, pulse duration time (sec) figure 11 transient thermal resistance r(t), t r a n s i e n t t h e r m a l r e s i s t a n c e r (t) = r(t) * r r = 313c/w duty cycle, d = t1/ t2 ? ja ja ja d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
DMN31D5UFZ document number: ds36843 rev. 2 - 2 5 of 6 www.diodes.com june 2014 ? diodes incorporated DMN31D5UFZ new product advanced information new product package outline dimensions please see ap02002 at http://www.diodes.com/ datasheets/ap02002.pdf for latest version. x2-dfn0606-3 dim min max typ a 0.36 0.42 0.39 a1 0 0.05 0.02 b 0.10 0.20 0.15 d 0.57 0.67 0.62 d2 0.155 bsc d3 0.185 bsc e 0.57 0.67 0.62 e2 0.40 0.60 0.50 e 0.35 bsc k 0.16 ref l 0.09 0.21 0.15 l2 0.11 0.31 0.21 all dimensions in mm suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. dimensions value (in mm) c 0.350 x 0.280 x1 0.350 x2 0.760 y 0.200 y1 0.600 a a 1 seating plane d e l 2 x k b 2 x e e 2 l 2 e / 2 d 2 d 3 x y c y 1 x 1 x 2
DMN31D5UFZ document number: ds36843 rev. 2 - 2 6 of 6 www.diodes.com june 2014 ? diodes incorporated DMN31D5UFZ new product advanced information new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical co mponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when prope rly used in accordance with instructions for use provided in the labeling can be reasonably expected to re sult in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2014, diodes incorporated www.diodes.com
|
